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| Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.00.3 11.00.2 Unit: mm 5.00.2 3.2 s Features q q q 16.20.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 200 150 200 5 10 6 60 3 150 -55 to +150 Unit V 0.7 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1457A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W B 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) Internal Connection C C C E s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency (TC=25C) Symbol ICBO VCEO(sus) VEBO hFE* VCE(sat) VBE(sat) fT Conditions VCB = 200V, IE = 0 IC = 2A, L = 10mH IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 0.5A, f = 1MHz 15 150 5 700 10000 1.5 2.5 V V MHz min typ max 100 Unit A V V *h FE Rank classification Q P O Rank hFE 700 to 2500 2000 to 5000 4000 to 10000 1 Power Transistors PC -- Ta 100 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (PC=3.0W) TC=25C 2SD1457, 2SD1457A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=50 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25C TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) 80 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 1 60 (1) 3 40 2 20 (2) (3) 0 0 25 50 75 100 125 150 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 100000 IC/IB=50 hFE -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=2V IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 10 3 TC=-25C 1 100C 0.3 0.1 0.03 0.01 0.01 0.03 25C 30000 3000 1000 300 100 30 10 3 1 0.1 10000 TC=100C 3000 1000 25C 300 100 30 10 0.01 0.03 -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C t=1ms ICP 0.1ms 3 1 0.3 0.1 0.03 0.01 1 3 10 30 IC 3ms 20ms DC Rth(t) -- t (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) Collector current IC (A) 10 102 (1) 10 (2) 1 2SD1457A 2SD1457 100 300 1000 10-1 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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